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| SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. FEATURES A Collector Current is Large. Collector Saturation Voltage is low. : VCE(sat) -250mV at IC=-200mA/IB=-10mA. A G H KTA2012V EPITAXIAL PLANAR PNP TRANSISTOR E B 1 3 MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range * Single pulse Pw=1mS. ) SYMBOL VCBO VCEO VEBO IC ICP * PC Tj Tstg RATING -15 -12 -6 -500 -1 100 150 -55 150 UNIT V V V mA A mW C K P P 1. EMITTER 2. BASE 3. COLLECTOR VSM Marking J D Complementary to KTC4072V. 2 DIM MILLIMETERS _ A 1.2 +0.05 _ B 0.8 +0.05 _ C 0.5 + 0.05 _ D 0.3 + 0.05 _ E 1.2 + 0.05 _ 0.8 + 0.05 G 0.40 H _ 0.12 + 0.05 J _ K 0.2 + 0.05 P 5 Type Name SZ ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance ICBO V(BR)CBO V(BR)CEO V(BR)EBO hFE VCE(sat) fT Cob ) TEST CONDITION VCB=-15V, IE=0 IC=-10 A IC=-1mA IE=-10 A VCE=-2V, IC=-10mA IC=-200mA, IB=-10mA VCE=-2V, IC=-10mA, fT=100MHz VCB=-10V, IE=0, f=1MHz MIN. -15 -12 -6 270 TYP. -100 260 6.5 MAX. -100 680 -250 UNIT nA V V V mV MHz pF SYMBOL 2002. 2. 20 Revision No : 1 1/3 KTA2012V h FE - I C 1K DC CURRENT GAIN h FE 500 300 Ta=125 C Ta=25 C Ta=-40 C VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) -1K -500 -300 -100 -50 -30 -10 -5 -3 -1 -1 -3 -10 -30 -100 -300 -1K Ta= 125 I C /IB =20 C 100 50 30 VCE =-2V 25 C C Ta= =-40 Ta 10 -1 -3 -10 -30 -100 -300 -1K COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) -1K -500 -300 -100 -50 -30 -10 -5 -3 -1 -1 -3 -10 -30 -100 -300 -1K I C /IB =50 I C /IB =20 I C /IB =10 VBE(sat) - I C BASE-EMITTER SATURATION VOLTAGE VBE(sat) (mV) -10K -5K -3K I C /IB =20 Ta=25 C -1K -500 -300 Ta=-40 C Ta=25 C C Ta=125 -100 -1 -3 -10 -30 -100 -300 -1K COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) I C - V BE TRANSITION FREQUENCY f T (MHz) -1K COLLECTOR CURRENT I C (mA) -500 -300 -100 Ta=1 25 C C Ta=40 C Ta=2 5 VCE =-2V fT - IC 1K 500 300 VCE =-2V Ta=25 C -50 -30 -10 -5 -3 -1 0 100 50 30 10 -1 -3 -10 -30 -100 -300 -1K COLLECTOR CURRENT I C (mA) -0.5 -1.0 -1.5 BASE-EMITTER VOLTAGE VBE (V) 2002. 2. 20 Revision No : 1 2/3 KTA2012V C ob - VCB , C ib - VEB COLLECTOR INPUT CAPACITANCE C ib (PF) COLLECTOR OUTPUT CAPACITANCE C ob (PF) 1K 500 300 100 50 30 10 5 3 1 -0.1 C ob COLLECTOR POWER DISSIPATION P C (mW) I E =0A f=1MHz Ta=25 C Pc - Ta 200 150 C ib 100 50 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) -0.3 -1 -3 -10 -30 -100 COLLECTOR-BASE VOLTAGE VCB (V) EMITTER-BASE VOLTAGE VEB (V) 2002. 2. 20 Revision No : 1 3/3 |
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